back-gate MOS structure

MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back-gate MOS structure vok. Back-Gate-MOS-Struktur, f; MOS-Struktur mit rückwärtigem Substratanschluß, f rus. МОП-структура с нижним затвором, f pranc. structure MOS à grille inférieure, f

Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“. . 2000.

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  • Back-Gate-MOS-Struktur — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure …   Radioelektronikos terminų žodynas

  • structure MOS à grille inférieure — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure …   Radioelektronikos terminų žodynas

  • MOS-Struktur mit rückwärtigem Substratanschluß — MOP darinys su apatine užtūra statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure …   Radioelektronikos terminų žodynas

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  • MOP darinys su apatine užtūra — statusas T sritis radioelektronika atitikmenys: angl. back gate MOS structure vok. Back Gate MOS Struktur, f; MOS Struktur mit rückwärtigem Substratanschluß, f rus. МОП структура с нижним затвором, f pranc. structure MOS à grille inférieure, f …   Radioelektronikos terminų žodynas

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